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commercial semiconductor device simulator sentaurus  (Synopsys Inc)

 
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    Synopsys Inc commercial semiconductor device simulator sentaurus
    (a), The SPPD dispersion curves in air/ p -type/ n -type GaAs waveguide configuration for two doping concentrations; N A = 1 × 10 19 , N D = 5 × 10 19 cm −3 (red line), and N A = 1 × 10 19 , N D = 3 × 10 19 cm −3 (blue line). (b), Steady state minority carrier concentration profiles for different applied voltages. (c), The transmittance curves obtained using the integrated finite difference <t>semiconductor</t> and optical module (solid blue line) and the WKB approximation (dashed red line), show exponential decrease of the output signal for V > V c = 1.57 V and (d), SPP propagation across the SPPD drift-diffusion zone obtained at different applied voltages. In the calculations the operation frequency is set at 35 THz, the thickness of the p -type layer is d = 0.5 μm and the overall length of the active drift-diffusion region is fixed at w = 2 μm .
    Commercial Semiconductor Device Simulator Sentaurus, supplied by Synopsys Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/commercial semiconductor device simulator sentaurus/product/Synopsys Inc
    Average 90 stars, based on 1 article reviews
    commercial semiconductor device simulator sentaurus - by Bioz Stars, 2026-05
    90/100 stars

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    1) Product Images from "Terahertz Optoelectronics with Surface Plasmon Polariton Diode"

    Article Title: Terahertz Optoelectronics with Surface Plasmon Polariton Diode

    Journal: Scientific Reports

    doi: 10.1038/srep04899

    (a), The SPPD dispersion curves in air/ p -type/ n -type GaAs waveguide configuration for two doping concentrations; N A = 1 × 10 19 , N D = 5 × 10 19 cm −3 (red line), and N A = 1 × 10 19 , N D = 3 × 10 19 cm −3 (blue line). (b), Steady state minority carrier concentration profiles for different applied voltages. (c), The transmittance curves obtained using the integrated finite difference semiconductor and optical module (solid blue line) and the WKB approximation (dashed red line), show exponential decrease of the output signal for V > V c = 1.57 V and (d), SPP propagation across the SPPD drift-diffusion zone obtained at different applied voltages. In the calculations the operation frequency is set at 35 THz, the thickness of the p -type layer is d = 0.5 μm and the overall length of the active drift-diffusion region is fixed at w = 2 μm .
    Figure Legend Snippet: (a), The SPPD dispersion curves in air/ p -type/ n -type GaAs waveguide configuration for two doping concentrations; N A = 1 × 10 19 , N D = 5 × 10 19 cm −3 (red line), and N A = 1 × 10 19 , N D = 3 × 10 19 cm −3 (blue line). (b), Steady state minority carrier concentration profiles for different applied voltages. (c), The transmittance curves obtained using the integrated finite difference semiconductor and optical module (solid blue line) and the WKB approximation (dashed red line), show exponential decrease of the output signal for V > V c = 1.57 V and (d), SPP propagation across the SPPD drift-diffusion zone obtained at different applied voltages. In the calculations the operation frequency is set at 35 THz, the thickness of the p -type layer is d = 0.5 μm and the overall length of the active drift-diffusion region is fixed at w = 2 μm .

    Techniques Used: Dispersion, Concentration Assay, Diffusion-based Assay



    Similar Products

    commercial semiconductor device simulator sentaurus  (Synopsys Inc)
    90
    Synopsys Inc commercial semiconductor device simulator sentaurus
    (a), The SPPD dispersion curves in air/ p -type/ n -type GaAs waveguide configuration for two doping concentrations; N A = 1 × 10 19 , N D = 5 × 10 19 cm −3 (red line), and N A = 1 × 10 19 , N D = 3 × 10 19 cm −3 (blue line). (b), Steady state minority carrier concentration profiles for different applied voltages. (c), The transmittance curves obtained using the integrated finite difference <t>semiconductor</t> and optical module (solid blue line) and the WKB approximation (dashed red line), show exponential decrease of the output signal for V > V c = 1.57 V and (d), SPP propagation across the SPPD drift-diffusion zone obtained at different applied voltages. In the calculations the operation frequency is set at 35 THz, the thickness of the p -type layer is d = 0.5 μm and the overall length of the active drift-diffusion region is fixed at w = 2 μm .
    Commercial Semiconductor Device Simulator Sentaurus, supplied by Synopsys Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
    https://www.bioz.com/result/commercial semiconductor device simulator sentaurus/product/Synopsys Inc
    Average 90 stars, based on 1 article reviews
    commercial semiconductor device simulator sentaurus - by Bioz Stars, 2026-05
    90/100 stars
    		  Buy from Supplier

    Image Search Results


    (a), The SPPD dispersion curves in air/ p -type/ n -type GaAs waveguide configuration for two doping concentrations; N A = 1 × 10 19 , N D = 5 × 10 19 cm −3 (red line), and N A = 1 × 10 19 , N D = 3 × 10 19 cm −3 (blue line). (b), Steady state minority carrier concentration profiles for different applied voltages. (c), The transmittance curves obtained using the integrated finite difference semiconductor and optical module (solid blue line) and the WKB approximation (dashed red line), show exponential decrease of the output signal for V > V c = 1.57 V and (d), SPP propagation across the SPPD drift-diffusion zone obtained at different applied voltages. In the calculations the operation frequency is set at 35 THz, the thickness of the p -type layer is d = 0.5 μm and the overall length of the active drift-diffusion region is fixed at w = 2 μm .

    Journal: Scientific Reports

    Article Title: Terahertz Optoelectronics with Surface Plasmon Polariton Diode

    doi: 10.1038/srep04899

    Figure Lengend Snippet: (a), The SPPD dispersion curves in air/ p -type/ n -type GaAs waveguide configuration for two doping concentrations; N A = 1 × 10 19 , N D = 5 × 10 19 cm −3 (red line), and N A = 1 × 10 19 , N D = 3 × 10 19 cm −3 (blue line). (b), Steady state minority carrier concentration profiles for different applied voltages. (c), The transmittance curves obtained using the integrated finite difference semiconductor and optical module (solid blue line) and the WKB approximation (dashed red line), show exponential decrease of the output signal for V > V c = 1.57 V and (d), SPP propagation across the SPPD drift-diffusion zone obtained at different applied voltages. In the calculations the operation frequency is set at 35 THz, the thickness of the p -type layer is d = 0.5 μm and the overall length of the active drift-diffusion region is fixed at w = 2 μm .

    Article Snippet: A self-consistent model was developed by first calculating the electron and hole concentrations over the SPPD using commercial semiconductor device simulator (SENTAURUS, Synopsys Inc.).

    Techniques: Dispersion, Concentration Assay, Diffusion-based Assay